SI1900DL datasheet(2/4 Pages) VISHAY

2 / 4 page

Si1900DL

Vishay Siliconix

www.vishay.com

Document Number: 71251

S-21374—Rev. C, 12-Aug-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 24 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 85_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

1.0

VGS = 10 V, ID = 0.59 A

0.410

0.480

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 0.2 A

0.600

0.700

Forward Transconductancea

gfs

VDS = 10 V, ID = 0.59 A

0.75

Diode Forward Voltagea

VSD

IS = 0.23 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

0.86

1.4

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 10 V, ID = 0.59 A

0.24

Gate-Drain Charge

Qgd

0.08

Turn-On Delay Time

td(on)

Rise Time

VDD = 15 V, RL = 30 W

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 30 W

ID ^ 0.5 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 0.23 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

TC = 125_C

-55

3 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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