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STD20NF06T4 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD20NF06T4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STD20NF06 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VDGR Drain-gate voltage (RGS = 20 kΩ)60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 24 A ID Drain current (continuous) at TC = 100°C 17 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 96 A Ptot Total dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C dv/dt(2) 2. ISD ≤24A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Peak diode recovery avalanche energy 10 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 10A, VDD = 45V Single pulse avalanche energy 300 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose (1) 1. 1.6 mm from case, for 10 sec. 275 °C |
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