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4-Channel Ultra Low Capacitance ESD

Protection Diodes Array

- 5.0V

054

36-H.

LL

BT

Features

4 channels of ESD protection

(ESD)

IEC 61000-4-4 (EFT) 80A (5/50ns)

IEC 61000-4-5 (Surge) (8/20us)

Channel I/O to GND capacitance: 0.9pF(Max)

Channel I/O to I/O capacitance: 0.45pF(Max)

Low clamping voltage

Low operating voltage

Improved zener structure

Optimized package for easy high speed data lines PCB layou

RoHS compliant

t

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IEC 61000-4-2

level 4

Document ID

Issued Date

Revised Date

Revision

Page.

Applications

HDMI / DVI ports

Display Port interface

10M / 100M / 1G Ethernet

USB 2.0 interface

VGA interface

Set-top box

Flat panel Monitors / Tvs

PC / Note book

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Formosa MS

Mechanical data

Epoxy:UL94-V0 rated flame retardant

Case :

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Mounting Position : Any

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Molded plastic, SOT-363

Weight : Approximated 0.006 gram

Symbol

Ratings

Unit

Peak pulse power(8/20us)

Operating junction temperature range

T

opr

-55 to +125

A

o

Storage temperature range

T

stg

ESD per IEC 61000-4-2(Air)

ESD per IEC 61000-4-2(Contact)

Ι

PP

±

±8

15

W

Peak pulse current

(8/20us)

IEC 61000-4-5

V

ESD

P

PP

A

kV

150

5

-55 to +150

°C

°C

Package outline

SOT-363

.086(2.20)

.070(1.80)

.012(0.30)

.004(0.10)

.053(1.35)

.045(1.15)

.010(0.25)

.003(0.08)

.026(0.65)Typ.

.012(0.30)

.004(0.10)

.004(0.10)

Max.

.043(1.10)

.031(0.80)

.016(0.40)

.012(0.30)

Dimensions in inches and (millimeters)

LL054BT36

A

o

Parameter

Conditions

Symbol

Reverse working voltage

Negative clamping voltage

Junction capacitance

Between channel

Reverse leakage current

Reverse breakdown voltage

I

= 1mA, Any I/O pin to GND

BV

V

BR

Min.

Typ.

Max.

Unit

V

RWM

5.0

1.0

12.0

1.8

6.0

V

V

uA

V

V

any I/O pin to GND

V

=5V,Any I/O pin to GND

RWM

C

J1

C

J2

8.5

0.35

0.9

pF

Positive clamping voltage

I =1A, tp=8/20us,positive pulse;

any I/O pin to GND

PP

I =1A, tp=8/20us,negative pulse;

any I/O pin to GND

PP

V =0V, f=1MHz,between I/O pins

R

Junction capacitance

Between I/O and GND

V =0V, f=1MHz,any I/O pin to GND

R

Parameter

0.45

pF

I

R

V

C1

V

C2

R

θJΑ

R

θJC

670

370

Typical thermal resistance junction to ambient

SMD Ultra Low Capacitance ESD Protection Array

Typical thermal resistance junction to case

DS-221852

2012/01/11

2016/03/24

B

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