Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, l

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

Features

ow forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

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Page 2

Formosa MS

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Diode junction capacitance

Storage temperature

See Fig.2

8.3ms single half sine-wave (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

C

J

T

STG

A

A

mA

pF

1.0

30

1.0

+175

-65

V

= V

T = 25 C

R

RRM

J

O

130

SL12-MS

SL14-MS

20

40

14

28

20

40

-55 to +100

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =1.0A

F

V

F

(V)

*4

0.40

0.38

(C)

O

Operating

temperature

T,

J

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

Revised Date

Revision

Page.

A

1.0A

Surface Mount

Schottky Barrier Rectifiers - 20V-40V

Low VF

SL12-MS THRU SL14-MS

Mechanical data

Epoxy : UL94-V0 rated flame retardant

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Case : Molded plastic, SOD-123S/MINI SMA

Terminals :Plated terminals, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : Approximated 0.0155 gram

DS-12161V

2012/03/12

-

A

7

SMD Low VF Schottky Barrier Rectifier

Package outline

0.154(3.9)

0.138(3.5)

0.018(0.45) Typ.

0.079(2.0)

0.063(1.6)

0.040(1.00)

0.036(0.90)

0.032 (0.8) Typ.

0.032(0.8) Typ.

0.028(0.7)

0.044(1.1)

Dimensions in inches and (millimeters)

SOD-123S

0.009(0.22)

0.007(0.18)

0.119(3.0)

0.103(2.6)

Thermal resistance

R

θJA

53

Junction to ambient

R

θJC

35

Junction to case

20

V

= V

T = 75 C

R

RRM

J

O