Package outline

Page 2

High current capability

Features

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Low reverse leakage current

High surge capability.

Glass passivated chip junction.

Lead-free parts meet RoHS requirments.

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Suffix "-H" indicates Halogen free parts, ex. ΕF1005FCΤ-H.

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Reverse recovery time less than 25ns

Dual rectifier construction, positive centetap, offers 5.0A

half wave and10.0A full wave rectification.

Low forward drop down voltage.

High reliability.

Formosa MS

10.0A Glass Passivated

Effcienct Fast Rectifiers-50-600V

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

Revised Date

Revision

Page.

EF1005FCT THRU EF1060FCT

Dimensions in inches and (millimeters)

ITO-220AB

0.406(10.3)

0.381(9.7)

0.134(3.4)

0.118(3.0)

0.606(15.4)

0.583(14.8)

0.272(6.9)

0.248(6.3)

1

2

3

0.161(4.1)MAX

0.548(13.9)

0.189(4.8)

0.165(4.2)

0.028(0.7)

0.019(0.50)

0.1(2.55)

PIN 1

PIN 3

PIN 2

0.130(3.3)

0.099(2.5)

0.032(0.8)MAX

0.512(13.0)

Mechanical data

Epoxy : UL94-V0 rated flame retardant

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Case : JEDEC ITO-220AB molded plastic body over

passivated chip

Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed

Polarity:

Mounting Position : Any

Weight : Approximated 1.70 gram

As marked

Effciency Fast Rectifiers

A

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Peak forward surge current 8.3ms

single half sine-wave(JEDEC method)

Maximum DC blocking voltage

Maximum average forward rectified current

Operating junction temperature range

Storage temperature range

Maximum forward voltage

at IF=5.0A

per leg

Maximum DC reverse current

at TJ =25 C

at TJ =125 C

°

°

at rated DC blocking voltage per leg

A

Thermal characteristics

Maximum reverse recovery time

(Note 2)

per leg

Typical thermal resistance junction to case per leg

PARAMETER

PARAMETER

PARAMETER

SYMBOLS

SYMBOLS

SYMBOLS

trr

EF1005FCT

50

35

50

EF1010FCT

0.98

100

70

100

EF1020FCT

-55 to +150

-65 to +175

5.0

250

25

200

140

200

10.0

80

3.0

EF1040FCT

400

280

400

1.30

EF1060FCT

1.75

600

420

600

UNIT

°C

°C

UNIT

uA

uA

UNIT

°C/W

ns

V

V

V

A

A

V

Typical diode junction capacitance (Note 1)

30

pF

EF1005FCT

EF1010FCT

EF1020FCT EF1040FCT EF1060FCT

EF1005FCT

EF1010FCT

EF1020FCT EF1040FCT EF1060FCT

Note 1:

Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A

Note 2:

Measure at 1 MHz and applied reverse voltage of 4.0 V D.C.

DS-222529

2009/08/10

2015/07/06

D

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