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EM1YZ Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # EM1YZ
Description  PLASTIC SILICON RECTIFIER
PDF  2 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

EM1YZ Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
and similar solvents
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EM1
EM1A
EM1B
EM1C
UNITS
Maximum recurrent peak reverse voltage
VRRM
400
600
800
1000
V
Maximum RMS voltage
VRMS
280
420
560
700
V
Maximum DC blocking voltage
VDC
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A=100
Typical junction capacitance
(Note1)
CJ
pF
Typical thermal resistance
(Note2)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
0.97
2. Thermal resistance f rom junction to ambient.
A
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55---- +150
- 55---- + 150
15
50
IR
VOLTAGE RANGE: 100 --- 1000 V
CURRENT:
1.0 A
A
IFSM
1.0
A
PLASTIC SILICON RECTIFIER
IF(AV)
200
EM1Z
45.0
5.0
50.0
EM1Y(Z)---EM1C(Z)
DO - 41
100
70
100
EM1Y
Easily cleaned with Freon,Alcohol,Isopropanol
200
The plastic material carries U/L recognition 94V-0
140
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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