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EM1YZ Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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EM1YZ Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 gram s Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EM1 EM1A EM1B EM1C UNITS Maximum recurrent peak reverse voltage VRRM 400 600 800 1000 V Maximum RMS voltage VRMS 280 420 560 700 V Maximum DC blocking voltage VDC 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 0.97 2. Thermal resistance f rom junction to ambient. A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 - 55---- + 150 15 50 IR VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.0 A A IFSM 1.0 A PLASTIC SILICON RECTIFIER IF(AV) 200 EM1Z 45.0 5.0 50.0 EM1Y(Z)---EM1C(Z) DO - 41 100 70 100 EM1Y Easily cleaned with Freon,Alcohol,Isopropanol 200 The plastic material carries U/L recognition 94V-0 140 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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