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GI504 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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GI504 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page  .2 TJ=25 f=1MHz .1 .1 2 4 .4 1.0 2 40 10 20 60 100 4 10 20 40 100 0.01 10 1 100 10 0.1 10 0.1 1 0 T J =2 5 20 40 60 80 100 0.01 0.1 1 10 100 T J = 100 T J = 150 0.6 TJ=25 Pulse Width=300uS 0.8 1.0 1.2 1.4 2.0 1.6 1.8 0.1 0.4 1 4 10 20 40 100 75 25 0 50 S ingle P has e H alf W av e 60H Z R e sistive o r Induc tive Loa d 1 2 5 3 4 6 100 125 175 150 SURGE CURRENT GI500---GI510 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.1 -- FORWARD DERATING CURVE FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD CHARACTERISTICS FIG.5 -- TYPICAL JUNCTION CAPACITANCE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE FIG.3 -- TYPICAL INSTANTANEOUS FORWARD FIG.4 -- TYPICAL REVERSE CHARACTERISTICS REVERSE VOLTAGE,VOLTS PULSE DURATION, SEC PERCENT OF RATED PEAK REVERSE VOLTAGE,% 2 0 0 10 20 100 46 4 0 60 20 40 60 80 100 TJ=125 8.3ms Single Half Sine Wave www.diode.kr Diode Semiconductor Korea |
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