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IPS521G Datasheet(PDF) 2 Page - International Rectifier |
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IPS521G Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page ![]() IPS521G 2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) Symbol Parameter Min. Typ. Max. Units Test Conditions Rth1 Thermal resistance with standard footprint — a Rth2 Thermal resistance with 1" square footprint — & a Thermal Characteristics 8 Lead SOIC oC/W Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25 oC unless otherwise specified). Symbol Parameter Min. Max. Units Test Conditions Vout Maximum output voltage Vcc-50 Vcc+0.3 Voffset Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 Vin Maximum Input voltage -0.3 5.5 Iin, max Maximum positive IN current -5 10 mA Vdg Maximum diagnostic output voltage -0.3 5.5 V Idg, max Maximum diagnostic output current -1 10 mA Isd cont. Diode max. permanent current (1) (rth = 125oC/W) — 1.4 Isd pulsed Diode max. pulsed current (1) —10 ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0 Ω, L=10µH Pd Maximum power dissipation (1) (rth=125oC/W) — 1 W Tj max. Max. storage & operating junction temp. -40 +150 Vcc max. Maximum Vcc voltage — 50 V V A kV oC Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vcc Continuous Vcc voltage 5.5 35 VIH High level input voltage 4 5.5 VIL Low level input voltage -0.3 0.9 Iout Continuous output current Tc=85 oC (TAmbient = 85oC, Tj = 125oC, Rth = 100oC/W) — 1.6 A Rin Recommended resistor in series with IN pin 4 6 Rdg Recommended resistor in series with DG pin 10 20 V k Ω |
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