IRF7821 datasheet(1/10 Pages) IRF

Part #	IRF7821

Description	Power MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 10 page

www.irf.com

1

1/14/03

IRF7821

HEXFET® Power MOSFET

Notes

through are on page 10

Benefits

l Very Low RDS(on) at 4.5V VGS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

Applications

l High Frequency Point-of-Load

Synchronous Buck Converter for

Applications in Networking &

Computing Systems.

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

VDSS

RDS(on) max

Qg(typ.)

30V

9.1m

W@VGS= 10V

9.3nC

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

f

W

PD @TA = 70°C

Power Dissipation

f

Linear Derating Factor

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

°C/W

RθJA

Junction-to-Ambient

fg

–––

50

-55 to + 155

2.5

0.02

1.6

Max.

13.6

11

100

± 20

30

PD - 94579B

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