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EG01C Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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EG01C Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() FEATURES Low cost Diffused junction The plastic material carries U/L recognition 94v-0 MECHANICAL DATA Case: JEDEC DO-41, molded plastic Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V Maximum DC blocking voltage VDC 200 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @T J=125 Maximum instantaneous forw ard voltage @ I F=I F(AV) VF 1.9 3.3 V Maximum reverse current @T A=25 0.1 0.05 at rated DC blocking voltage @T A=100 0.5 0.50 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. NOTE: 1. Measured with I F=0.5A, IR=1A, I rr=0.5A High current capability Polarity: Color band denotes cathode Weight: 0.012 ounces, 0.34grams IFSM IF(AV) IR 2.0 EG01Y(Z)---EG01C(Z) HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 70 --- 1000 V CURRENT: 0.5 --- 1.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 41 Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and 1000 UNITS similar solvents Terminals: Axial leads,solderable per MIL-STD-202, EG01C EG01Y EG01Z EG01 EG01A 70 A A mA 1.0 0.7 0.5 30.0 0.5 0.1 0.05 700 1000 10.0 - 55 --- + 150 - 55 --- + 150 50 49 70 1.2 15.0 20 15 60 0.30 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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