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RN3Z Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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RN3Z Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,1.15 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage VDC Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IFSM 80.0 200 140 RN3Z RN3Z(Z) A 50.0 Easily cleaned with alcohol,Isopropanol and similar solvents IF(AV) 3.0 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 200 V CURRENT: 3.0 A The plastic material carries U/L recognition 94V-0 DO - 27 3. Thermal resistance f rom junction to ambient. A IR 200 50 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 30 1000.0 NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. - 55 ---- + 150 - 55 ---- + 150 V 0.92 A 70 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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