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MSB08M Datasheet(PDF) 2 Page - Diodes Incorporated |
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MSB08M Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() MSB08M Document number: DS37067 Rev. 4 - 2 2 of 5 www.diodes.com April 2016 © Diodes Incorporated MSB08M Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 1,000 V RMS Reverse Voltage VR(RMS) 700 V Average Rectified Output Current @ TC = +120°C IO 0.8 A Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) RθJA 80 °C/W Typical Thermal Resistance, Junction to Case RθJC 12 °C/W Typical Thermal Resistance, Junction to Lead RθJL 40 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 1,000 — — V IR = 5μA Forward Voltage VF — — 0.90 0.95 1.02 1.05 V IF = 0.4A IF = 0.8A Leakage Current (Note 6) IR — — — — 5 500 μA VR = 1,000V, TA = +25°C VR = 1,000V, TA = +125°C Typical Total Capacitance CT — 10 — pF VR = 4V, f = 1.0MHz Note: 5. Device mounted on glass-epoxy substrate with 1oz 20mm x 20mm Cu pad per pin. 6. Short duration pulse test used to minimize self-heating effect. 0 0.2 0.4 0.6 0.8 1 0 25 50 75 T , CASE TEMPERATURE (°C) C Figure 1 Forward Current Derating Curve 100 125 150 Figure 2 Typical Forward Characteristics V , INSTANTANEOUS FORWARD VOLTAGE (V) F 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 T = 25°C A T = 50°C A T = 75°C A T = 100°C A T = 125°C A T = 150°C A Note 5 |
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