NTP45N06, NTB45N06

http://onsemi.com

2

Rating

Symbol

Value

Unit

Thermal Resistance

– Junction–to–Case

– Junction–to–Ambient (Note 3.)

– Junction–to–Ambient (Note 4.)

R

θJC

R

θJA

R

θJA

1.2

46.8

63.2

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 5.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

70

57

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

–

–

–

–

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

–

–

±100

nAdc

ON CHARACTERISTICS (Note 5.)

Gate Threshold Voltage (Note 5.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

–

2.8

7.2

4.0

–

Vdc

mV/

°C

Static Drain–to–Source On–Resistance (Note 5.)

(VGS = 10 Vdc, ID = 22.5 Adc)

RDS(on)

–

21

26

mOhm

Static Drain–to–Source On–Voltage (Note 5.)

(VGS = 10 Vdc, ID = 45 Adc)

(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)

VDS(on)

–

–

0.93

0.93

1.4

–

Vdc

Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc)

gFS

–

16.6

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

1224

1725

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

345

485

Transfer Capacitance

f = 1.0 MHz)

Crss

–

76

160

SWITCHING CHARACTERISTICS (Note 6.)

Turn–On Delay Time

td(on)

–

10

25

ns

Rise Time

(VDD = 30 Vdc, ID = 45 Adc,

tr

–

101

200

Turn–Off Delay Time

(VDD 30 Vdc, ID 45 Adc,

VGS = 10 Vdc, RG = 9.1 Ω) (Note 5.)

td(off)

–

33

70

Fall Time

tf

–

106

220

Gate Charge

(V

48 Vd

I

45 Ad

QT

–

33

46

nC

(VDS = 48 Vdc, ID = 45 Adc,

VGS = 10 Vdc) (Note 5.)

Q1

–

6.4

–

VGS = 10 Vdc) (Note 5.)

Q2

–

15

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)

(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

–

–

1.08

0.93

1.2

–

Vdc

Reverse Recovery Time

(I

45 Ad

V

0 Vd

trr

–

53.1

–

ns

(IS = 45 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 5.)

ta

–

36

–

dIS/dt = 100 A/µs) (Note 5.)

tb

–

16.9

–

Reverse Recovery Stored Charge

QRR

–

0.087

–

µC

3. When surface mounted to an FR4 board using 1

″ pad size, (Cu Area 1.127 in2).

4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).

5. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.