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NTP52N10 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTP52N10
Description  Power MOSFET 52 Amps, 100 Volts
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTP52N10 Datasheet(HTML) 2 Page - ON Semiconductor

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NTP52N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
−
−
160
−
−
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ =25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ =125°C)
IDSS
−
−
−
−
5.0
50
µAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
−
2.92
−8.75
4.0
−
Vdc
mV/
°C
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 26 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C)
RDS(on)
−
−
0.023
0.050
0.030
0.060
Ω
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 52 Adc)
VDS(on)
−
1.25
1.45
Vdc
Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc)
gFS
−
31
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
−
2250
3150
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
−
620
860
Transfer Capacitance
f = 1.0 MHz)
Crss
−
135
265
SWITCHING CHARACTERISTICS (Notes 2. & 3.)
Turn−On Delay Time
td(on)
−
15
25
ns
Rise Time
(VDD = 80 Vdc, ID = 52 Adc,
tr
−
95
180
Turn−Off Delay Time
(VDD 80 Vdc, ID
52 Adc,
VGS = 10 Vdc, RG = 9.1 Ω)
td(off)
−
74
150
Fall Time
tf
−
100
190
Gate Charge
(V
80 Vd
I
52 Ad
Qtot
−
72
135
nC
(VDS = 80 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
Qgs
−
13
−
VGS = 10 Vdc)
Qgd
−
37
−
BODY−DRAIN DIODE RATINGS (Note 2.)
Diode Forward On−Voltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
−
−
1.06
0.95
1.5
−
Vdc
Reverse Recovery Time
(I
52 Ad
V
0Vd
trr
−
148
−
ns
(IS = 52 Adc, VGS = 0 Vdc,
diS/dt = 100 A/µs)
ta
−
106
−
diS/dt = 100 A/µs)
tb
−
42
−
Reverse Recovery Stored Charge
QRR
−
0.66
−
µC
2. Indicates Pulse Test: P.W. = 300
µs Max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.



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