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NTP52N10 Datasheet(PDF) 2 Page - ON Semiconductor |
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NTP52N10 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() NTP52N10 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 100 − − 160 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ =25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ =125°C) IDSS − − − − 5.0 50 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 − 2.92 −8.75 4.0 − Vdc mV/ °C Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 26 Adc) (VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C) RDS(on) − − 0.023 0.050 0.030 0.060 Ω Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 52 Adc) VDS(on) − 1.25 1.45 Vdc Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc) gFS − 31 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0Vd Ciss − 2250 3150 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 620 860 Transfer Capacitance f = 1.0 MHz) Crss − 135 265 SWITCHING CHARACTERISTICS (Notes 2. & 3.) Turn−On Delay Time td(on) − 15 25 ns Rise Time (VDD = 80 Vdc, ID = 52 Adc, tr − 95 180 Turn−Off Delay Time (VDD 80 Vdc, ID 52 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 74 150 Fall Time tf − 100 190 Gate Charge (V 80 Vd I 52 Ad Qtot − 72 135 nC (VDS = 80 Vdc, ID = 52 Adc, VGS = 10 Vdc) Qgs − 13 − VGS = 10 Vdc) Qgd − 37 − BODY−DRAIN DIODE RATINGS (Note 2.) Diode Forward On−Voltage (IS = 52 Adc, VGS = 0 Vdc) (IS = 52 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.06 0.95 1.5 − Vdc Reverse Recovery Time (I 52 Ad V 0Vd trr − 148 − ns (IS = 52 Adc, VGS = 0 Vdc, diS/dt = 100 A/µs) ta − 106 − diS/dt = 100 A/µs) tb − 42 − Reverse Recovery Stored Charge QRR − 0.66 − µC 2. Indicates Pulse Test: P.W. = 300 µs Max, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperature. |
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