RN2221~RN2227

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2221,RN2222,RN2223

RN2224,RN2225,RN2226,RN2227

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1221~RN1227

Equivalent Circuit

Bias Resistor Values

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2221~2227

−50

V

RN2221~2224

−10

RN2225, 2226

−5

Emitter-base voltage

RN2227

−6

V

Collector current

−800

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN2221~2227

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2-4E1A

Weight: 0.13g

Unit: mm

Type No.

R1 (kΩ)R2 (kΩ)

RN2221

1

1

RN2222

2.2

2.2

RN2223

4.7

4.7

RN2224

10

10

RN2225

0.47

10

RN2226

1

10

RN2227

2.2

10