SI1012R datasheet(2/5 Pages) VISHAY

2 / 5 page

Si1012R/X

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71166

S-02464—Rev. A, 25-Oct-00

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.45

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"0.5

"1.0

VDS = 16 V, VGS = 0 V

0.3

100

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

700

VGS = 4.5 V, ID = 600 mA

0.41

0.70

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 500 m A

0.53

0.85

DS(on)

VGS = 1.8 V, ID = 350 m A

0.70

1.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 400 mA

1.0

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

750

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

Rise Time

= 10 V, R = 47

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 47 W

ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W

Fall Time

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)

200

400

600

800

1000

1200

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 1.8 V

TC = –55_C

125

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1 V

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