MSN6002F datasheet(1/5 Pages) MORESEMI

Part #	MSN6002F

Description	600V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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General Features

● VDS =600V,ID =2A

RDS(ON) <5.0 Ω @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-220F-3L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

Drain Current-Continuous

ID

2

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

1.35

A

Pulsed Drain Current

IDM

6

A

Maximum Power Dissipation

PD

W

Derating factor

0.28

W/℃

Single pulse avalanche energy

(Note 5)

EAS

240

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

MORE Semiconductor Company Limited

http://www.moresemi.com

1/5

MSN6002F

600V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN6002F

Lead Free

PIN Configuration

35

Schematic diagram

Marking and pin assignment

TO-220F top view

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