SI8405DB datasheet(2/5 Pages) VISHAY

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Si8405DB

Vishay Siliconix

www.vishay.com

Document Number: 71814

S-20804—Rev. C, 01-Jul-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

-0.7

-0.95

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = -12 V, VGS = 0 V

-1

Zero Gate Voltage Drain Current

IDSS

VDS = -12 V, VGS = 0 V, TJ = 70_C

-5

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = -4.5 V

-5

VGS = -4.5 V, ID = -1 A

0.045

0.055

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -1 A

0.055

0.070

DS(on)

VGS = -1.8 V, ID = -1 A

0.073

0.090

Forward Transconductancea

gfs

VDS = -10 V, ID = -1 A

Diode Forward Voltagea

VSD

IS = -1 A, VGS = 0 V

-0.73

-1.1

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = -6 V, VGS = -4.5 V, ID = -1 A

1.7

Gate-Drain Charge

Qgd

2.5

Turn-On Delay Time

td(on)

Rise Time

VDD = -6 V, RL = 6 W

Turn-Off Delay Time

td(off)

VDD = 6 V, RL = 6 W

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

120

180

Fall Time

120

Source-Drain Reverse Recovery Time

trr

IF = - A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

2468

VGS = 5 thru 2 V

25_C

TC = 125_C

-55_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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