TPS2149

TPS2159

SLVS401 – AUGUST 2001

4

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electrical characteristics over recommended operating junction-temperature range,

2.9 V

timing parameters, power switches

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

t

Turnon time OUTx switch (see Note 1)

CL = 100 µF

RL =33 Ω

0.5

6

ton

Turnon time, OUTx switch, (see Note 1)

CL = 1 µF

RL = 33 Ω

0.1

3

t ff

Turnoff time OUTx switch (see Note 1)

CL = 100 µF

RL =33 Ω

5.5

10

ms

toff

Turnoff time, OUTx switch (see Note 1)

CL = 1 µF

RL = 33 Ω

0.05

2

ms

t

Rise time OUTx switch (see Note 1)

CL = 100 µF

RL =33 Ω

0.5

5

tr

Rise time, OUTx switch (see Note 1)

CL = 1 µF

RL = 33 Ω

0.1

2

tf

Fall time OUTx switch (see Note 1)

CL = 100 µF

RL =33 Ω

5.5

9

tf

Fall time, OUTx switch (see Note 1)

CL = 1 µF

RL = 33 Ω

0.05

1.2

NOTE 1. Specified by design, not tested in production.

undervoltage lockout at VIN

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

UVLO Threshold

2.2

2.85

V

Hysteresis (see Note 1)

260

mV

Deglitch (see Note 1)

50

µs

NOTE 1. Specified by design, not tested in production.

electrical characteristics over recommended operating junction-temperature range,

2.9 V

(unless otherwise noted)

3.3 V LDO

PARAMETER

TEST CONDITIONS†

MIN

TYP

MAX

UNIT

VO

Output voltage, dc

VI(VIN) = 4.25 V to 5.25 V,

IO(LDO_OUT) = 0.5 mA to 200 mA

3.20

3.3

3.40

V

Dropout voltage

VI(VIN) = 3.2 V, IO(OUT1) = 150 mA,

IO(LDO_OUT) = 200 mA

0.35

V

Line regulation voltage (see Note 1)

VI(VIN) = 4.25 V to 5.25 V, IO(LDO_OUT) = 5 mA

0.1

%/V

Load regulation voltage (see Note 1)

VI(VIN) = 4.25 V, IO(LDO_OUT) = 5 mA to 200 mA

0.4

1%

IOS

Short-circuit current limit

VI(VIN) = 4.25 V, LDO_OUT connected to GND

0.275

0.33

0.55

A

Ilkg(R)

Reverse leakage current into

VO(LDO_OUT) = 3.3 V, VI(IN) = 0 V

10

µA

Ilkg(R)

g

LDO_OUT

VO(LDO_OUT) = 5.5 V, VI(IN) = 0 V

10

µA

Power supply rejection

f = 1 kHz, CL(LDO_OUT) = 4.7 µF, ESR = 0.25 Ω,

IO = 5 mA, VINp–p = 100 mV

50

dB

Ramp-up time, LDO_OUT (0% to 90%)

VIN ramping up from 10% to 90% in 0.1 ms,

RL = 16 Ω, CL(LDO_OUT) = 10 µF

0.1

1

ms

† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

NOTES:

1. Specified by design, not tested in production.