2014. 9. 16

1/7

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 12

7 CIRCUIT DARLINGTON TRANSISTOR ARRAY

FEATURES

・Output Current : 500mA Max.

・High Sustaining Voltage Outputs : 50V Min.

・Output Clamp Diodes.

・Inputs Compatible With Various Types of Logic.

・PKG Type AP : DIP-16Pin AF : FLP-16Pin

DESCRIPTION:

The KID65001AP/AF Series are high-voltage, high-current

darlington transistor array comprised of seven NPN darlington pairs.

All units feature internal clamp diodes for switching inductive loads.

16

9

18

Θ

DIP-16

A

d

P

D

W

T

DIM MILLIMETERS

A

B

D

T

P

d

G

H

L

3.8 0.3

0 - 15

1.52 0.1

W

19.3 0.2

6.45 0.2

0.46 0.1

0.50 MIN

3.3 0.3

2.54

0.25+0.1/-0.05

7.62

Θ

+

_

+

_

+

_

+

_

+

_

+

_

MAXIMUM RATINGS (Ta=25

℃, unless otherwise noted)

FLP-16

L

1

8

9

16

P

D

A

0.20+0.1/-0.05

P

T

1.27

MILLIMETERS

0.4 0.1

0.15+0.1/-0.05

9.88 0.2

B2

G

H

L

D

A

B1

DIM

6.00 0.3

1.63 0.2

0.65 0.2

3.94 0.2

+

_

+

_

+

_

+

_

+

_

+

_

KID65001AP/AF~

KID65004AP/AF

BIPOLAR LINEAR INTEGRATED CIRCUIT

CHARACTERISTIC

SYMBOL

RATING

UNIT

Output Sustaining Voltage

50

V

Output Current

500

mA/ch

Input Voltage

-0.5

～+30

V

Input Current

25

mA

Clamp

Diode

Reverse Voltage

50

V

Forward Current

500

mA

GND Terminal Current

2.8

A

Power Dissipation

AP

1.47

W

AF

W

Operating Temperature

-40

～85

℃

Storage Temperature

-55

～150

℃

TYPE

INPUT RESISTOR

DESIGNATION

KID65001AP/AF

No (External)

General Purpose

KID65002AP/AF

Zener Diode

7V+10.5k

Ω

14

～25V P-MOS

KID65003AP/AF

2.7k

Ω

TTL, 5V C-MOS

KID65004AP/AF

10.5k

Ω

6

～15V P-MOS, C-MOS

1) Except KID65001AP/AF

2) Only KID65001AP/AF

3) On PCB(30

×30×1.6mm, Cu 50%)

4) On PCB (Test Board : JEDEC 2s2p)