BC846 datasheet(1/3 Pages) ETC

Part #	BC846

Description	SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

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SOT23 PNP SILICON PLANAR

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - APRIL 1997

PARTMARKING DETAILS

COMPLEMENTARY TYPES

BC856A3A

BC858C3L

BC856

BC846

BC856BZ3B

BC859AZ4A

BC857

BC847

BC857AZ3E

BC859B4B

BC858

BC848

BC857B3F

BC859CZ4C

BC859

BC849

BC857C3G

BC860AZ4E

BC860

BC850

BC858A3J

BC860B4F

BC858B3K

BC860C4GZ

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BC856

BC857

BC858

BC859

BC860

UNIT

Collector-Base Voltage

VCBO

-80

-50

-30

-50

V

Collector-Emitter Voltage

VCES

-80

-50

-30

-50

V

Collector-Emitter Voltage

VCEO

-65

-45

-30

-45

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-100

mA

Peak Pulse Current

IEM

-200

mA

Base Current

IBM

-200

mA

Base Current

IEM

-200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage

Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

BC856 BC857 BC858 BC859 BC860

UNIT CONDITIONS.

Collector Cut-Off Current ICBO

Max

-15

nA

VCB= -30V

Max

-4

µ

A

VCB= -30V

Tamb=150°C

Collector-Emitter

Saturation Voltage

VCE(sat) Typ

Max.

-75

-300

-75

-300

-75

-300

-75

-250

-75

-250

mV

IC=-10mA,

IB=-0.5mA

Typ

Max.

-250

-650

mV

IC=-100mA,

IB=-5mA

Typ

Max.

-300

-600

mV

IC=-10mA*

Base-Emitter

Saturation Voltage

VBE(sat) Typ

-700

mV

IC=-10mA,

IB=-0.5mA

Typ

-850

mV

IC=-100mA,

IB=-5mA

Base-Emitter Voltage

VBE

Min

Typ

Max

-600

-650

-750

-600

-650

-750

-600

-650

-750

-580

-650

-750

-580

-650

-750

mV

IC=-2mA

VCE=-5V

Max

-820

mV

IC=-10mA

VCE=-5V

* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the

operating point IC= 11mA, VCE= 1V at constant base current.

BC856

BC857

BC858

BC859

BC860

C

B

E

SOT23

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