A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

35

V

65

V

4.0

V

2.0

mA

35

---

---

f = 1.0 MHz

250

pF

η

C

f = 175 MHz

8.5

60

dB

%

NPN SILICON RF POWER TRANSISTOR

BLW31

DESCRIPTION:

The

transistor, designed 108-175 MHz

applications. The device utilizes

diffused emitter resistors to achieve

good VSWR capability

FEATURES:

• Common Emitter-Class-C

• P

• Omnigold™ Metalization System

MAXIMUM RATINGS

4.0 A

36 V

18 V

4.0 V

-65 °C to +200 °C

-65 °C to +150 °C

θ

JC

4.4 °C/W

PACKAGE STYLE .380 4L STUD

MINIMUM

inches / mm

.004 / 0.10

.370 / 9.40

.320 / 8.13

B

C

D

E

F

G

A

MAXIMUM

.385 / 9.78

.330 / 8.38

.130 / 3.30

.007 / 0.18

inches / mm

H

.090 / 2.29

.100 / 2.54

DIM

.220 / 5.59

.230 / 5.84

.490 / 12.45

.450 / 11.43

I

J

.155 / 3.94

.175 / 4.45

.750 / 19.05

.980 / 24.89

.100 / 2.54

E

F

D

ØC

B

.112x45°

G

H

J

I

A

#8-32 UNC-2A

C

B

E

E