4953 datasheet(1/5 Pages) HOTTECH

Part #	4953

Description	P-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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4953

P-Channel Enhancement Mode Power MOSFET

Description

The 4953 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

●

VDS = -30V,ID = -5.1A

RDS(ON) < 105mΩ @ VGS=-4.5V

RDS(ON) < 55mΩ @ VGS=-10V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface Mount Package

Application

●

PWM applications

●

Load switch

●

Power management

G1

D1

D2

G2

S1

S2

Schematic diagram

pin assignment

SOP-8 top view

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-5.1

A

Drain Current-Pulsed (Note 1)

IDM

-20

A

Maximum Power Dissipation

PD

2

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

50

/W

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-30

-33

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-24V,VGS=0V

-

-1

μA

Page:P5 -P1

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

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4953 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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