KTC4375 datasheet(1/2 Pages) HOTTECH

Part #	KTC4375

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Low voltage

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

30

V

Collector-Emitter Voltage

V

CEO

30

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

1500

mA

Collector Power Dissipation

P

C

500

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=1mA,IE=0

30

V

Collector-emitter breakdown voltage

VCEO

IC=10mA,IB=0

30

V

Emitter-base breakdown voltage

VEBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A,IB=30mA

2

V

Base-emitter voltage

VBE

VCE=2V,IC=0.5A

1

V

Transition frequency

fT

VCE=2V,IC=500mA

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

40

pF

CLASSIFICATION

OF

HFE

Marking

GO

GY

Range

100-200

160-320

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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KTC4375 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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