SSF1007

100V N-Channel MOSFET

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Rev.1.0

Main Product Characteristics

100V（Typ）

6mohm（Typ）

130A

Features and Benefits

SSF1007 Top View (TO-220)



Advanced trench MOSFET process technology



Special designed for convertors and power controls



Ultra low on-resistance



150℃ operating temperature



High Avalanche capability and 100% tested



Lead free product

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an

extremely efficient and reliable device for use in power switching application and a wide variety of other

applications.

Absolute Max Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

130

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

91

IDM

Pulsed Drain Current②

520

ISM

Pulsed Source Current.(Body Diode)

258

A

Power Dissipation③

1.7

W

PD @TC = 25°C

Linear derating factor

± 20

W/ Cْ

VDS

Drain-Source Voltage

735

V

VGS

Gate-to-Source Voltage

75

V

dv/dt

Peak diode recovery voltage

-55 to + 175

v/ns

EAS

Single Pulse Avalanche Energy @ L=0.3mH②

130

mJ

IAR

Avalanche Current @ L=0.3mH②

91

A

TJ

TSTG

Operating Junction and

Storage Temperature

Range

520

°C

Thermal Resistance

Symbol

Characteristics

Value

Unit

0.58

℃/W

62

℃/W