2SC2412 datasheet(1/2 Pages) HOTTECH

Part #	2SC2412

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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FEATURES

Low Cob ,Cob = 2.0 pF (Typ).

MARKING : BQ, BR, BS

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=7V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=1mA

120

560

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.4

V

Transition frequency

fT

VCE=12V,IC=-2mA,f=100MHz

1

60

MHz

Collector output capacitance

Cob

VCB=12V,IE=0,f=1MHz

2.0

3.5

pF

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

120 - 270

180 - 390

270 - 560

Marking

BQ

BR

BS

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

2SC2412

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

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