C1815 datasheet(1/2 Pages) HOTTECH

Part #	C1815

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complementary type the PNP transistor

A1015 is recommended.

MARKING: HF

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

150

mA

Collector Power Dissipation

PC

0.2

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100uA,

IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC= 0.1mA, IB=0

50

V

Emitter-base breakdown voltage

VEBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

uA

Collector cut-off current

ICE

O

VCE=50V, IB=0

0.1

uA

Emitter cut-off current

IEB

O

VEB= 5V, IC=0

0.1

uA

DC current gain

hFE

VCE= 6V, IC= 2mA

130

400

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB= 10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB= 10mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA,

f=30MHz

80

MHz

CLASSIFICATION OF

hFE

Rank

L

H

Range

130-200

200-400

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

C1815

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