SSF3402

30V N-Channel MOSFET

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Page 2 of 4

Rev.1.0

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1

1.5

2.5

V

45

48

mΩ

Drain-Source On-State Resistance

26

30

mΩ

Forward Transconductance

13

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

660

1050

PF

Output Capacitance

90

PF

Reverse Transfer Capacitance

F=1.0MHz

70

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

6

nS

Turn-on Rise Time

20

nS

Turn-Off Delay Time

20

nS

Turn-Off Fall Time

3

nS

Total Gate Charge

8.5

15

nC

Gate-Source Charge

1.5

nC

Gate-Drain Charge

3.2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.