GTL2002 datasheet(7/14 Pages) PHILIPS

7 / 14 page

Philips Semiconductors

Product data sheet

GTL2002

2-bit bi-directional low voltage translator

2004 Sep 29

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

CONDITIONS

Min

Max

UNIT

VI/O

Input/output voltage (Sn, Dn)

5.5

VSREF

DC source reference voltage1

5.5

VDREF

DC drain reference voltage

5.5

VGREF

DC gate reference voltage

5.5

IPASS

Pass transistor current

—

Tamb

Operating ambient temperature range

In free air

–40

+85

°C

NOTE:

1. VSREF ≤ VDREF – 1.5 V for best results in level shifting applications.

ELECTRICAL CHARACTERISTICS

Over recommended operating free-air temperature range (unless otherwise noted)

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP1

MAX

UNIT

VOL

LOW-level output voltage

VDD = 3.0 V; VSREF = 1.365 V; VSn or VDn = 0.175 V;

Iclamp = 15.2 mA

—

260

350

VIK

Input clamp voltage

II = –18 mA

VGREF = 0 V

—

–1.2

IIH

Gate input leakage

VI = 5 V

VGREF = 0 V

—

µA

CI(GREF)

Gate capacitance

VI = 3 V or 0 V

—

19.4

—

CIO(OFF)

Off capacitance

VO = 3 V or 0 V

VGREF = 0 V

—

7.4

—

CIO(ON)

On capacitance

VO = 3 V or 0 V

VGREF = 3 V

—

18.6

—

VGREF = 4.5 V

—

3.5

VGREF = 3 V

IO =64mA

—

4.4

Ω

VI = 0 V

VGREF = 2.3 V

IO = 64 mA

—

5.5

Ω

r 2

On resistance

VGREF = 1.5 V

—

105

ron2

On-resistance

VGREF = 1.5 V

IO = 30 mA

—

Ω

V =2 4V

VGREF = 4.5 V

—

VI = 2.4 V

VGREF = 3 V

IO = 15 mA

—

Ω

VI = 1.7 V

VGREF = 2.3 V

—

NOTES:

1. All typical values are measured at Tamb = 25 °C

2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch.

On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals.

GTL2002 Datasheet(PDF) 7 Page - NXP Semiconductors

GTL2002 Datasheet(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL