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D882 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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D882 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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2 / 2 page ![]() Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. D882 Typical Characteristics 0 50 100 150 0 2 4 6 8 10 Ta-Ambient Temperature - C o 0 Tc-Case Temperature - C DERATING CURVES FOR ALL TYPES 100 150 40 60 80 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 1000 100 10 1 0.001 0.01 0.1 1 10 I C-Collector Current-A NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound. 100 cm 25cm 9cm Without hea t sink 2 2 2 20 o 50 S/b Lim ited PW-Pulse Width-mS 0.1 0.3 1 0.3 3 1 10 30 THERMAL RESISTANCE vs. PULSE WIDTH 30 10 100 300 1000 3 VCE-Collector to Emitter Voltage-V NOTE 1.TC=25 C 2.Curves must be derated Iinearly with increase of temperature and Duty Cycle. P W =1 00 s 0.01 13 6 10 0.03 0.1 0.3 1 m s SAFE OPERATING AREAS 3 1 10 30 100 60 10 ms MAX.(PW 10ms,Duty Cycle 50%) I C(pulse) I C(DC) MAX. DC Dis sip ation S/b Lim ite d Lim ite d (S ing le no nre pe titiv e pu lse ) o COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 12 VCE-Collector to Emitter Voltage-V 0 4 0.4 8 o 0.8 1.2 1.6 2.0 16 20 I B=1mA 2 3 4 5 6 7 8 9 10 Pulse Test 300 30 60 6 3 0.003 0.03 0.3 3 0.1 0.3 0.6 1 3 VCE=2.0V Pulse Test h FE VBE I C-Collector Current-A BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 0.03 0.003 0.01 0.003 VBE(sat) 0.1 0.06 0.3 0.6 VCE(sat) 10 10 0.3 0.03 0.01 0.1 1 3 I C=10.IB Pulse Test 0.006 1 3 0.001 1000 100 300 30 10 3 1 I C-Collcetor Current-A 0.01 0.03 0.1 0.3 1 GAIN BANDWIDTH PRODUCT vs. COLLCETOR CURRENT VCB-Collector to Base Voltage-V VEB-Emitter to Base Voltage-V INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 1 3 6 30 100 300 310 30 60 6 10 60 VCE=5.0V Forced air cooling (with heat sink) Cib f=1.0MHz I E=0(Cob) I C=0(Cib) Cob VCE=10V I C=1.0A Duty=0.001 |
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