Page:P3-P2

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

Total Gate Charge

4.5V

6

10

nC

Gate-Source Charge

1.4

nC

Gate-Drain Charge

1.8

nC

Drain-Source Diode Characteristics and Maximun Ratings

0.94

A

1.2

V

Typical

Characteristics

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board,t<10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

Ciss

Coss

Crss

600

500

400

300

200

100

0

0510152025

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

I

-100

-50

0

50

100

150

200

10

8

6

4

2

0

012

5

34

V

V

V

10

8

6

4

2

0

01

2

3

T

-55 C

25 C

SI2302