2N6052 datasheet(1/2 Pages) ISC

Part #	2N6052

Description	isc Silicon PNP Darlingtion Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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isc Silicon PNP Darlingtion Power Transistor

2N6052

DESCRIPTION

·

Built-in Base-Emitter Shunt Resistors

·

High DC current gain-

hFE = 750 (Min) @ IC = -6A

·

Collector-Emitter Sustaining Voltage-

VCEO(SUS)= -100V(Min)

·

Complement to type 2N6059

APPLICATIONS

·

Designed for general purpose amplifier and low frequency

switching applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

ThermalResistance, Junction to Case

1.17

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-12

A

ICM

Collector Current-Peak

-20

A

IB

Base Current

-0.2

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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