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MJD6039 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJD6039
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJD6039 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
MJD6039
DESCRIPTION
·
Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·
High DC Current Gain-
: hFE = 500(Min)@IC= 2A
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
0.1
A
PC
Collector Power Dssipation
TC=25℃
20
W
Collector Power Dissipation
Ta=25℃
1.75
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
71.4
℃
/W


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