IRLML6302 datasheet(2/4 Pages) HOTTECH

2 / 4 page

Plastic-Encapsulate Mosfets

Page:P4 -P2

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-20

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

-4.9 mV/°C Reference to 25°C, ID = -1mA

0.60

VGS = -4.5V, ID = -0.61A

0.90

VGS = -2.7V, ID = -0.31A

VGS(th)

Gate Threshold Voltage

-0.70 -1.5

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

0.56

VDS = -10V, ID = -0.31A

-1.0

VDS = -16V, VGS = 0V

-25

VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

-100

VGS = -12V

Gate-to-Source Reverse Leakage

100

VGS = 12V

Total Gate Charge

2.4

3.6

ID = -0.61A

Qgs

Gate-to-Source Charge

0.56 0.84

VDS = -16V

Qgd

Gate-to-Drain ("Miller") Charge

1.0

1.5

VGS = -4.5V, See Fig. 6 and 9

td(on)

Turn-On Delay Time

VDD = -10V

Rise Time

ID = -0.61A

td(off)

Turn-Off Delay Time

RG = 6.2Ω

Fall Time

RD = 16Ω, See Fig. 10

Ciss

Input Capacitance

VGS = 0V

Coss

Output Capacitance

VDS = -15V

Crss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Ω

µA

IGSS

IDSS

Drain-to-Source Leakage Current

RDS(ON)

Static Drain-to-Source On-Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

-1.2

TJ = 25°C, IS = -0.61A, VGS = 0V

trr

Reverse Recovery Time

TJ = 25°C, IF = -0.61A

Qrr

Reverse RecoveryCharge

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

-4.9

-0.54

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

IRLML6302

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