S9012 datasheet(1/2 Pages) HOTTECH

Part #	S9012

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complimentary to S9013

MARKING: 2T1

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-0.5

A

Collector Power Dissipation

PC

0.3

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

CLASSIFICATION OF

hFE

Rank

L

H

J

Range

120-200

200-350

300-400

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -100uA, IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA, IB=0

-25

V

Emitter-base breakdown voltage

VEBO

IE=-100uA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

uA

Collector cut-off current

ICEO

VCE=-20V, IB=0

-0.1

uA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

uA

DC current gain

hFE

VCE=-1V, IC= -50mA

120

400

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V,

IC= -20mA

f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

5

pF

S9012

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S9012 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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