NUD3105D datasheet(2/8 Pages) ONSEMI

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NUD3105D

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MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Symbol

Rating

Value

Unit

VDSS

Drain to Source Voltage − Continuous

6.0

Vdc

VGS

Gate to Source Voltage – Continuous

6.0

Vdc

Drain Current – Continuous

500

Single Pulse Drain−to−Source Avalanche Energy (

TJinitial = 25°C)

Junction Temperature

150

°C

Operating Ambient Temperature

−40 to 85

°C

Tstg

Storage Temperature Range

−65 to +150

°C

Total Power Dissipation (Note 1)

Derating Above 25

°C

380

1.5

mW/

°C

RqJA

Thermal Resistance Junction−to−Ambient

329

°C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. This device contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per MIL_STD−883, Method 3015.

Machine Model Method 200 V.

TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

VBRDSS

Drain to Source Sustaining Voltage (Internally Clamped)

(ID = 10 mA)

6.0

8.0

9.0

BVGSO

Ig = 1.0 mA

−

8.0

IDSS

Drain to Source Leakage Current

(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)

(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )

−

IGSS

Gate Body Leakage Current

(VGS = 3.0 V, VDS = 0 V)

(VGS = 5.0 V, VDS = 0 V)

5.0

−

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

(VGS = VDS, ID = 1.0 mA)

(VGS = VDS, ID = 1.0 mA, TJ = 85°C)

0.8

1.2

−

1.4

RDS(on)

Drain to Source On−Resistance

(ID = 250 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 5.0 V)

(ID = 500 mA, VGS = 3.0 V, TJ = 85°C)

(ID = 500 mA, VGS = 5.0 V, TJ = 85°C)

−

1.2

1.3

0.9

1.3

0.9

IDS(on)

Output Continuous Current

(VDS = 0.25 V, VGS = 3.0 V)

(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)

300

200

400

−

gFS

Forward Transconductance

(VOUT = 5.0 V, IOUT = 0.25 A)

350

570

−

mmhos

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