MMDT5401 datasheet(1/2 Pages) HOTTECH

Part #	MMDT5401

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial Planar Die Construction

Complementary PNP Type Available(MMDT5551)

Ideal for Medium Power Amplification and Switching

MARKING: K4M

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-160

V

Collector-Emitter Voltage

V

CEO

-150

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-200

Collector Power Dissipation

I

C

200

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA ,

IE=0

-160

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA ,

IB=0

-150

V

Emitter-base breakdown voltage

VEBO

IE=-10μA,

IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120 V ,

IE=0

-0.05

μA

Emitter cut-off current

IEBO

VEB=-3V ,

IC=0

-0.05

μA

DC current gain

hFE(1)

VCE=-5 V,

IC= -1mA

50

hFE(2)

VCE=-5 V,

IC= -10mA

100

300

hFE(3)

VCE=-5 V,

IC= -50mA

50

Collector-emitter saturation voltage

VCE(sat)1

IC=-10 mA, IB=-1mA

-0.2

V

VCE(sat)2

IC=-50 mA, IB=-5mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)1

IC= -10 mA, IB=-1mA

-1

V

VBE(sat)2

IC= -50 mA, IB=-5mA

-1

V

Transition frequency

f T

VCE= -10V, IC= -10mA,f = 100MHz

100

MHz

Output Capacitance

Cob

VCB=-10V,

IE= 0,f=1MHz

6

pF

Noise Figure

NF

VCE= -5.0V, IC= -200μA,

RS= 10Ω,f = 1.0kHz

8.0

dB

MMDT5401(PNP)

E

2

B

2

C

1

C

2

B

1

E

1

SOT-363

mW

mA

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MMDT5401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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