MMDT5551 datasheet(1/2 Pages) HOTTECH

Part #	MMDT5551

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial Planar Die Construction

Complementary PNP Type Available(MMDT5401)

Ideal for Medium Power Amplification and Switching

MARKING: K4N

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

180

V

Collector-Emitter Voltage

V

CEO

160

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

200

Collector Power Dissipation

I

C

200

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100μA,IE=0

180

V

Collector-emitter breakdown voltage

VCEO

IC=1mA , IB=0

160

V

Emitter-base breakdown voltage

VEBO

IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=120V, IE=0

0.05

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.05

μA

DC current gain

hFE(1)

VCE=5 V,

IC=1mA

80

hFE(2)

VCE=5 V,

IC=10mA

100

300

hFE(3)

VCE=5 V,

IC=50mA

30

Collector-emitter saturation voltage

VCE(sat)1

IC=10mA, IB=1mA

0.15

V

VCE(sat)2

IC=50mA, IB=5mA

0.2

V

Base-emitter saturation voltage

VBE(sat)1

IC=10mA, IB=1mA

1

V

VBE(sat)2

IC=50mA, IB=5mA

1

V

Transition frequency

f T

VCE=10V, IC=10mA,f=100MHz

100

300

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

6

pF

Noise Figure

NF

VCE=5V, IC=0.2mA,

RS=1KΩ,f =1kHz

8

dB

MMDT5551(NPN)

E

2

B

2

C

1

C

2

B

1

E

1

SOT-363

mW

mA

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