MMST5551 datasheet(1/2 Pages) HOTTECH

Part #	MMST5551

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary PNP type available(MMST5401).

Also available in lead free version.

Marking:K4N

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

180

V

Collector-Emitter Voltage

V

CEO

160

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

PC

300

mW

Thermal resistance junction to ambient

RθJA

625

°C/W

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Umit

Collector-base breakdown voltage

VCBO

IC=100μA,IE=0

180

Collector-emitter breakdown voltage

VCEO

IC=0.1mA,IB=0

160

Emitter-base breakdown voltage

VEBO

IE=10μA,IC=0

6

Collector cut-off current

ICBO

IE = 0; VCB = 120V

-

50

nA

Emitter cut-off current

IEBO

IC = 0; VEB = 4V

-

50

nA

DC current gain

hFE

VCE = 5V; IC= 1mA

VCE = 5V;IC = 10mA

VCE = 5V;IC = 50 Ma

80

30

-

250

-

Collector-emitter saturation voltage

VCE(sat)

IC = 50 mA; IB = 5 mA

IC = 10 mA; IB = 1 mA

-

0.2

0.15

V

Base-emitter saturation voltage

VBE(sat)

IC = 50 mA; IB = 5 mA

IC = 10 mA; IB = 1 mA

-

1

V

Transition frequency

fT

IC = 10mA; VCE = 10V;

f

= 100MHz

80

-

MHz

MMST5551 (NPN)

1. BASE

2. EMITTER

SOT-323

3. COLLECTO

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MMST5551 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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