2SA812 datasheet(1/2 Pages) HOTTECH

Part #	2SA812

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

Logo

1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complementary to 2SC1623

High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)

High Voltage: Vceo=-50V

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60

V

Collector-Emitter Voltage

V

CEO

-50

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-100

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100

μA, IE=0

-60

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA, IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE= -100

μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=- 60 V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=- 6V, IC= -1mA

90

600

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB= -10mA

-0.3

V

Base-emitter voltage

VBE

IC=-1mA, VCE=-6V

-0.58

-0.68

V

Transition frequency

fT

VCE=-6V,

IC= -10mA

180

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

4.5

pF

CLASSIFICATION OF

hFE

Marking

M4

M5

M6

M7

Range

90-180

135-270

200-400

300-600

2SA812(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

Similar Part No. - 2SA812

Manufacturer	Part #	Datasheet	Description
NEC	2SA812	241Kb / 4P	AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSYS Electronics Lim...	2SA812	69Kb / 1P	Plastic-Encapsulated Transistors
Galaxy Semi-Conductor H...	2SA812	253Kb / 4P	Silicon Epitaxial Planar Transistor Rev.A
Guangdong Kexin Industr...	2SA812	123Kb / 2P	PNP Silicon Epitaxial Transistor
Dc Components	2SA812	228Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

More results

Similar Description - 2SA812

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	S9013	963Kb / 2P	PLASTIC ENCAPSULATE TRANSISTORS
Micro Commercial Compon...	MMDT5401	116Kb / 3P	Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	BCX51	1Mb / 1P	Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	D882	277Kb / 2P	Plastic Encapsulate Transistors
Micro Commercial Compon...	MMDT5401	231Kb / 3P	Plastic-Encapsulate Transistors
MAKO SEMICONDUCTOR CO.,...	2SC945	99Kb / 2P	Plastic-Encapsulate Transistors
MAKO SEMICONDUCTOR CO.,...	KTC3875	88Kb / 2P	Plastic-Encapsulate Transistors
Nanjing International G...	KTA1275	149Kb / 1P	Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	2SD2142	271Kb / 1P	Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	BC516	401Kb / 3P	Plastic-Encapsulate Transistors

More results

2SA812 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

2SA812 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Similar Part No. - 2SA812

Similar Description - 2SA812

Html Pages

1 2

Datasheet Download

Link URL