2SA1179 datasheet(1/2 Pages) HOTTECH

Part #	2SA1179

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

High breakdown voltage

Marking: M

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-55

V

Collector-Emitter Voltage

V

CEO

-50

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-150

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-10u A,IE=0

-55

V

Collector-emitter breakdown voltage

VCEO

IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE=-10 u A,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V,IE=0

-0.1

u A

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.1

u A

DC current gain

hFE

VCE=-6V,IC=-1mA

200

400

Collector-emitter saturation voltage

VCE(sat)

IC=-50mA,IB=-5mA

-0.5

V

Base -emitter saturation voltage

VBE(sat)

IC=-50mA,IB=-5mA

-1.0

V

Transition frequency

fT

VCE=-6V,IC=-10mA

180

MHz

Collector output capacitance

Cob

VCB=-6V,IE=0,f=1MHz

4

pF

2SA1179 (PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

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2SA1179 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

2SA1179 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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