SI8402DB datasheet(2/6 Pages) VISHAY

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Si8402DB

Vishay Siliconix

New Product

www.vishay.com

Document Number: 72657

S-32557—Rev. A, 15-Dec-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.4

1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 70_C

On-State Drain Currenta

ID(on)

VDS v 5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 1 A

0.031

0.037

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 1 A

0.033

0.039

DS(on)

VGS = 1.8 V, ID = 1 A

0.035

0.043

Forward Transconductancea

gfs

VDS = 10 V, ID = 1 A

Diode Forward Voltagea

VSD

IS = 1 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 1 A

Gate-Drain Charge

Qgd

3.1

Gate Resistance

f = 1 MHz

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W

145

220

Fall Time

115

Source-Drain Reverse Recovery Time

trr

IF = 1 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

1234

VGS = 5 thru 2 V

25_C

TC = 125_C

−55_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1 V

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