2SD1766 datasheet(1/2 Pages) HOTTECH

Part #	2SD1766

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)

• Complements to 2SB1188

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

32

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

2

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Uni

Collector-base breakdown voltage

VCBO

IC=50μA, IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=1mA, IB=0

32

V

Emitter-base breakdown voltage

VEBO

IE=50μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=20V, IE=0

1

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

1

μA

DC current gain

hFE(1)

VCE=3V, IC=500mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=0.2A

0.8

V

Transition frequency

fT

VCE=5V, IC=50mA, f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

Marking

DBP

DBQ

DBR

2SD1766 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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2SD1766 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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