2SD2413 datasheet(1/2 Pages) HOTTECH

Part #	2SD2413

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• High collector to base voltage VCBO

•High collector to emitter voltage VCEO

•Large collector power dissipation PC

•Low collector to emitter saturation voltage VCE(sat)

Marking: 1S

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

400

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

100

mA

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100μA, IE=0

400

V

Collector-emitter breakdown voltage

VCEO

IC=0.5mA, IB=0

400

V

Emitter-base breakdown voltage

VEBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=400V, IE=0

50

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

50

μA

DC current gain

hFE

VCE=5V, IC=30mA

30

Collector-emitter saturation voltage

VCE(sat)

IC=50mA, IB=5mA

1.5

V

Base-emitter saturation voltage

VBE(sat)

IC=50mA, IB=5mA

1.5

V

Transition frequency

fT

VCE=30V, IC=20mA, f=200MHz

40

MHz

Collector output capacitance

Cob

VCB = 30V, IE=0, f=1MHz

7

pF

2SD2413 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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2SD2413 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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