TAS5182 datasheet(2/15 Pages) TI

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TAS5182

SLES045E - JUNE 2002 - REVISED MAY 2004

www.ti.com

ORDERING INFORMATION

PACKAGE

°C to 70°C

TAS5182DCA

-40

°C to 85°C

TAS5182IDCA

These devices have limited built-in ESD protection. The

leads should be shorted together or the device placed in

conductive foam during storage or handling to prevent

electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (TA) unless otherwise noted(1)

TAS5182

Supply voltage range

GVDD to GVSS

-0.3 V to 15 V

Supply voltage range

DVDD to DVSS

-0.3 V to 3.6 V

AP, AM, BP, BM, CP, CM, DP, DM

-0.3 V to DVDD + 0.3 V

RESET, SHUTDOWN

-0.3 V to DVDD + 0.3 V

BST_A, BST_B, BST_C, BST_D to GVSS for pulse width <100 ns

63 V

Switching frequency

1500 kHz

Operating junction temperature range, TJ

150

°C

Storage temperature range, Tstg

-65

°C to 150°C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Supply voltage range

GVDD to GVSS

12.6

Supply voltage range

DVDD to DVSS

3.3

3.6

High-side bootstrap supply voltage range

BST_A, BST_B, BST_C, BST_D

52.6

High-side drain connection voltage range

DHS_A, DHS_B, DHS_C, DHS_D

High-side source connection voltage range

SHS_A, SHS_B, SHS_C, SHS_D

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