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TPC6001 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC6001 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPC6001 2004-07-06 4 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID 100°C 0 2 4 6 8 14 0 1 1.5 2 2.5 3 Ta = −55°C 25°C Common source VDS = 10 V Pulse test 0.5 10 12 4 6 0 0.2 0.4 0.6 0.8 1.0 1.5 1.4 VGS = 1.3 V 1.6 1.8 10 0 2 4 6 8 10 Common source Ta = 25°C Pulse test 1.7 2 2.5 02 46 8 10 Common source Ta = 25°C Pulse test 1.6 2 1.4 VGS = 1.2 V 1.8 4.5 10, 8, 6 0 4 8 12 16 20 2.5 1 3 5 10 30 50 1 3 5 30 50 100 100 10 Common source VDS = 10 V Pulse test 100°C 25°C Ta = −55°C 1 3 10 30 100 0.1 0.3 1 3 30 100 10 Common source Ta = 25°C Pulse test VGS = 4.5 V 2.5 V 2 V 10 02 46 8 1.5 A 0 0.1 0.2 0.3 0.4 0.5 3 A ID = 6 A Common source Ta = 25°C Pulse test |
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