DMN3016LFDF datasheet(2/7 Pages) DIODES

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DMN3016LFDF

Document number: DS37735 Rev. 1 - 2

2 of 7

www.diodes.com

June 2016

DMN3016LFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25C

TA = +70C

t<10s

TA = +25C

TA = +70C

Maximum Continuous Body Diode Forward Current (Note 6)

2.5

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

IDM

Avalanche Current (Note 7) L = 0.1mH

IAR

Avalanche Energy (Note 7) L = 0.1mH

EAR

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.73

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

174

°C/W

t<10s

121

Total Power Dissipation (Note 6)

TA = +25°C

2.02

TA = +70°C

1.30

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

Steady State

RJC

11.6

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.4

2.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

mΩ

VGS = 10V, ID = 11A

VGS = 4.5V, ID = 9A

Diode Forward Voltage

VSD

0.70

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

1415

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

119

Reverse Transfer Capacitance

Crss

Gate Resistance

2.6

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

11.3

VDS = 15V, ID = 12A

Total Gate Charge (VGS = 10V)

25.1

Gate-Source Charge

Qgs

3.5

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

tD(ON)

4.8

VDD = 15V, VGS = 10V,

RL = 1.25Ω, Rg = 3Ω

Turn-On Rise Time

16.5

Turn-Off Delay Time

tD(OFF)

26.1

Turn-Off Fall Time

5.6

Reverse Recovery Time

tRR

12.3

IF = 12A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

10.4

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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