| Electronic Components Datasheet Search |
|
DMN3025LFDF Datasheet(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN3025LFDF Datasheet(HTML) 4 Page - Diodes Incorporated |
|
4 / 6 page ![]() DMN3025LFDF Datasheet number: DS37737 Rev. 1 - 2 4 of 6 www.diodes.com June 2016 © Diodes Incorporated DMN3025LFDF 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs Junction Temperature I D = 1mA I D = 250µA 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current V GS = 0V, TJ = 25 oC 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance f = 1MHz C iss C oss C rss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 Q g (nC) Figure 10. Gate Charge V DS = 15V, ID = 10A 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 11. Transient Thermal Resistance RθJA (t) = r(t) * RθJA RθJA = 174℃/W Duty Cycle, D = t1/t2 D=Single Pulse D=0.005 D=0.01 D=0.02 D=0.05 D=0.1 D=0.3 D=0.5 D=0.7 D=0.9 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |