MSN2005Z datasheet(1/6 Pages) MORESEMI

Part #	MSN2005Z

Description	200V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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1 / 6 page

General Features

● VDS = 200V,ID =5A

RDS(ON) < 580mΩ @ VGS=10V

(Typ:520m

Ω)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Schematic diagram

Marking and pin assignment

TO-251 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN2005Z

TO-251

-

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

5

A

Drain Current-Pulsed

(Note 1)

IDM

20

A

Maximum Power Dissipation

PD

30

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

MSN2005Z

200V(D-S) N-Channel Enhancement Mode Power MOS FET

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

Lead Free

PIN Configuration

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