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MSN2020 Datasheet(PDF) 3 Page - MORE Semiconductor Company Limited

Part # MSN2020
Description  20V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  6 Pages
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Manufacturer  MORESEMI [MORE Semiconductor Company Limited]
Direct Link  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN2020 Datasheet(HTML) 3 Page - MORE Semiconductor Company Limited

  MSN2020 Datasheet HTML 1Page - MORE Semiconductor Company Limited MSN2020 Datasheet HTML 2Page - MORE Semiconductor Company Limited MSN2020 Datasheet HTML 3Page - MORE Semiconductor Company Limited MSN2020 Datasheet HTML 4Page - MORE Semiconductor Company Limited MSN2020 Datasheet HTML 5Page - MORE Semiconductor Company Limited MSN2020 Datasheet HTML 6Page - MORE Semiconductor Company Limited  
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Typical ElectricalL and Thermal Characteristics
MORE Semiconductor Company Limited
http://www.moresemi.com
3/6
0.0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
VGS= 2.5V ~5.0V
Output characteristics
On-Resistance vs. Drain current
On-Resistance vs. Junction temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.4
0.8
1.2
1.6
2.0
T=-50
oC
Transfer characteristics
On-Resistance vs. Gate-to-Source voltage
Threshold voltage vs. Temperature
VGS=2.0V
VGS=1.5V
VDS-Drain-to-Source Voltage(V)
T=25
oC
T=125
oC
VGS-Gate-to-Source Voltage(V)
V
DS
=5V
0.4
0.8
1.2
1.6
2.0
100
150
200
250
300
350
400
V
GS
=4.5V
V
GS
=1.8V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
400
800
1200
1600
VGS-Gate-to-Source Voltage(V)
V
GS
=2.5V
IDS-Drain-to-Source Current(A)
-50
-25
0
25
50
75
100
125
150
120
160
200
240
280
320
VGS=4.5V, ID=0.55A
-50
-25
0
25
50
75
100
125
150
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
D
=250uA
Temperature (
oC)
Temperature(
oC)
MSN2020



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